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AO4852 - 60V Dual N-Channel MOSFET

General Description

The AO4852 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

As a pair these MOSFETs operate very efficiently in Push Pull and Bridge topologies.

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AO4852 60V Dual N-Channel MOSFET General Description The AO4852 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. As a pair these MOSFETs operate very efficiently in Push Pull and Bridge topologies. Product Summary VDS (V) = 60V ID = 3.5A (VGS = 10V) RDS(ON) <90mΩ (VGS = 10V) RDS(ON) <105mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested Top View SOIC-8 Bottom View Pin1 D1 D2 Top View S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 G1 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Maximum Parameter Symbol 10 Sec Steady State Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain TA=25°C 3.5 3 Current A TA=70°C ID 2.8 2.