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AO4914A - Dual N-Channel Enhancement Mode Field Effect Transistor

General Description

The AO4914A uses advanced trench technology to provide excellent R DS(ON) and low gate charge.

The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters.

Key Features

  • Q1 Q2 VDS (V) = 30V VDS(V) = 30V ID = 8.5A (VGS = 10V) ID = 8.5A (VGS = 10V) RDS(ON) < 18mΩ.

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Full PDF Text Transcription for AO4914A (Reference)

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AO4914A Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO4914A uses advanced trench technology to provide excellent R...

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ion The AO4914A uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further Standard product AO4914A is Pb-free (meets ROHS & Sony 259 specifications). AO4914AL is a Green Product www.DataSheet4U.com ordering option. AO4914A and AO4914AL are electrically identical. Features Q1 Q2 VDS (V) = 30V VDS(V) = 30V ID = 8.5A (VGS = 10V) ID = 8.5A (VGS = 10V) RDS(ON) < 18mΩ <18mΩ (VGS = 10V) RDS

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