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AO4918A - Dual N-Channel Enhancement Mode Field Effect Transistor

General Description

The AO4918A uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters.

Key Features

  • Q1 VDS (V) = 30V ID = 9.3A RDS(ON) < 14.5mΩ RDS(ON) < 16mΩ Q2 VDS(V) = 30V ID=8.5A.

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Full PDF Text Transcription for AO4918A (Reference)

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AO4918A Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO4918A uses advanced trench technology to provide excellent RDS(ON) an...

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O4918A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. A Schottky diode is co-packaged in www.DataSheet4U.com parallel with the synchronous MOSFET to boost efficiency further. AO4918A is Pb-free (meets ROHS & Sony 259 specifications). AO4918AL is a Green Product ordering option. AO4918A and AO4918AL are electrically identical. Features Q1 VDS (V) = 30V ID = 9.3A RDS(ON) < 14.5mΩ RDS(ON) < 16mΩ Q2 VDS(V) = 30V ID=8.5A <18mΩ (VGS = 10V) <27mΩ (VGS = 4.5V) SCHOTTKY VDS (V) = 3

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