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AON6810 - N-Channel MOSFET

General Description

Latest Trench Power AlphaMOS (αMOS LV) technology Very Low RDS(ON) at 4.5V VGS Low Gate Charge ESD protection RoHS and Halogen-Free Compliant Common Drain Integrated Temp Sense Diode Application Battery Management Produ

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AON6810 AlphaMOS 30V Common Drain N-Channel General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant • Common Drain • Integrated Temp Sense Diode Application • Battery Management Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Typical ESD protection 100% UIS Tested 100% Rg Tested 30V 20A < 4.4mΩ < 6.