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AONP36332U Datasheet

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Alpha & Omega Semiconductors · AONP36332U File Size : 573.23KB · 17 hits

Features and Benefits

lanche energy L=0.01mH EAS 18 12 TC=25°C Power Dissipation B TC=100°C PD 52 21 26 10 TA=25°C Power Dissipation A TA=70°C PDSM 3.4 2.2 3.1 2 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambien.

AONP36332U AONP36332U AONP36332U
TAGS
30V
Dual
Asymmetric
N-Channel
MOSFET
AONP36332U
AONP36336
AONP36320
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