Trench Power MOSFET technology
Low RDS(ON) at 4.5V Vgs
Low Gate Charge
High Current Capability
RoHS and Halogen-Free Compliant
Applications
DC/DC Converters in Computer
See Note I
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at V
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AONY36356
30V Dual Asymmetric N-Channel MOSFET
General Description
• Trench Power MOSFET technology • Low RDS(ON) at 4.5V Vgs • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant
Applications
• DC/DC Converters in Computer • See Note I
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V)
Q1 Q2 30V 30V
32A 32A < 6.1mΩ < 3.8mΩ < 9.6mΩ < 4.
AONY36356 Datasheet
