AOU452 Datasheet N-Channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: www.DataSheet4U.com AOU452 N-Channel Enhancement Mode Field Effect.

Datasheet Details

The AOU452 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

Standard Product AOU452 is Pb-free (meets ROHS & Sony 259 specifications).

VDS (V) =25V ID = 55 A (VGS = 10V) RDS(ON) < 9 mΩ (VGS = 10V) RDS(ON) < 15 mΩ (VGS = 4.5V) Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum 25 ±20 55 40 100 30 135 50 25 -55 to 175 Units V V A A mJ W °C TC=25°C TC=100°C ID IDM IAR EAR PD TJ, TSTG TC=25°C Repetitive avalanche energy L=0.1mH Powe.