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BLA6H1011-600 - LDMOS avionics power transistor

Description

600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz to 1090 MHz range.

Table 1.

Test information Typical RF performance at Tcase = 25 C; tp = 50 s;  = 2 %; IDq = 100 mA; in a class-AB production test circuit.

Features

  • Typical pulsed RF performance at a frequency of 1030 MHz to 1090 MHz, a supply voltage of 48 V, an IDq of 100 mA, a tp of 50 s with  of 2 %:.
  • Output power = 600 W.
  • Power gain = 17 dB.
  • Efficiency = 52 %.
  • Easy power control.
  • Integrated ESD protection.
  • High flexibility with respect to pulse.

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Datasheet Details

Part number BLA6H1011-600
Manufacturer Ampleon
File Size 333.39 KB
Description LDMOS avionics power transistor
Datasheet download datasheet BLA6H1011-600 Datasheet

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BLA6H1011-600 LDMOS avionics power transistor Rev. 02 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz to 1090 MHz range. Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 50 s;  = 2 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation f (MHz) VDS PL Gp D tr tf (V) (W) (dB) (%) (ns) (ns) pulsed RF 1030 to 1090 48 600 17 52 11 5 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.
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