npn silicon epitaxial transistor.
* Low Voltage Use.
* High fT : 4.5 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)
* Low Cre : 0.7 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz)
* Low NF : 1.2 dB.
The NE85619 / 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers
fromVHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent .
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