NE85619-A Datasheet (NPN SILICON EPITAXIAL TRANSISTOR)

Part: NE85619-A
Manufacturer: CEL
Size: 4.33 MB

NE85619-A Key Features

Low Voltage Use
High fT : 4.5 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)
Low Cre : 0.7 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz)
Low NF : 1.2 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)
High |S21e|2: 9 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)
Ultra Super Mini Mold Package

Other NE85619-A Datasheets

Manufacturer	Part Number	Description
NEC	NE85619	NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

NE85619-A Description

The NE85619 / 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers fromVHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface, process (NEST2 process) which is a proprietary fabrication technique.