NESG3031M14 Description
DATASHEET NEC's NPN SiGe NESG3031M14 HIGH FREQUENCY TRANSISTOR.
NESG3031M14 Key Features
- MAXIMUM STABLE POWER GAIN: MSG = 15.0 dB TYP. @ VCE = 3 V, IC = 20 mA, f = 5.8 GHz
- SiGe HBT TECHNOLOGY (UHS3) ADOPTED: fmax = 110 GHz
- M14 PACKAGE: 4-pin lead-less minimold package M14 Package
- 8 mm wide embossed taping
- Pin 1 (Collector), Pin 4 (Emitter) face the perforation side of the tape