Part number:
NESG3031M14
Manufacturer:
CEL
File Size:
572.79 KB
Description:
Npn sige high frequency transistor.
NESG3031M14 Datasheet (572.79 KB)
* THE DEVICE IS AN IDEAL CHOICE FOR LOW NOISE, HIGH-GAIN AMPLIFICATION: NF = 0.95 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz NF = 1.1 dB TYP., Ga = 9.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz
* MAXIMUM STABLE POWER GAIN: MSG = 15.0 dB TYP. @ VCE = 3 V, IC = 20
NESG3031M14 Datasheet (572.79 KB)
NESG3031M14
CEL
572.79 KB
Npn sige high frequency transistor.
📁 Related Datasheet
NESG3031M05 NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR (NEC)
NESG3032M14 NPN SILICON GERMANIUM RF TRANSISTOR (California Eastern Labs)
NESG064T AMBER LED (NICHIA CORPORATION)
NESG2021M05 NPN SiGe HIGH FREQUENCY TRANSISTOR (CEL)
NESG2021M05 NPN SiGe RF Transistor (Renesas)
NESG2021M16 HIGH FREQUENCY TRANSISTOR (CEL)
NESG2030M04 NONLINEAR MODEL (NEC)
NESG2030M04 SiGe HIGH FREQUENCY TRANSISTOR (CEL)
NESG2031M05 NPN SiGe HIGH FREQUENCY TRANSISTOR (CEL)
NESG2031M16 HIGH FREQUENCY TRANSISTOR (CEL)
