* This device is an ideal choice for low noise, high-gain at low current amplifications. ⎯ NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz ⎯ NF .

NPN SiGe RF Transistor

NESG2021M16

NESG2030M04

NESG2031M05

NESG2031M16

NESG204619

NESG2046M33

NESG2101M05

NESG2101M16

NESG210719

NESG2107M33

NESG210833

NESG250134

NESG260234

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