* Fast Switching
* Low ON Resistance(Rdson≤0.68Ω)
* Low Gate Charge (Typical Data: 87nC)
* Low Reverse transfer capacitances(Typical: 3.3pF)
* 10.

Power switch circuit of inverter and welding. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating V.

VDSS 900 CS13N90 AKR-G, the silicon N-channel Enhanced ID 13 VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 227 which reduce the conduction loss, improve switching RDS(ON)Typ 0.57 performance and enhance the aval.

CS13N90ANR

CS13N03AE

CS13N10AQ3-G

CS13N10AQ4-G

CS13N50A8D

CS13N50A8H

CS13N50A8R

CS13N50FA9D

CS13N50FA9H

CS13N50FA9R

CS13-E2GA332MYNS

CS130

CS13001