CS13N90ANR mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l Low ON Resistance(Rdson≤0.68Ω) l Low Gate Charge (Typical Data: 87nC) l Low Reverse transfer capacitances(Typical: 3.3pF) l 100% Single Pulse avalanch.
Power switch circuit of inverter and welding.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
Dra.
VDSS
900
V
CS13N90 ANR, the silicon N-channel Enhanced
ID
13
A
VDMOSFETs, is obtained by the self-aligned planar Technology
PD (TC=25℃) RDS(ON)Typ
227 0.57
W Ω
which reduce the conduction loss, improve switching
performance and enhance .
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