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PE8250M - N-Channel Enhancement Mode Power MOSFET

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Datasheet Details

Part number PE8250M
Manufacturer ChipSourceTek
File Size 772.37 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE8250M Datasheet

General Description

The PE8250M uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

It is ESD protected.

Overview

N-Channel Enhancement Mode Power MOSFET.

Key Features

  • VDS = 18V, ID = 50A Schematic diagram RDS(ON) < 4.2mΩ @ VGS=4.5V RDS(ON) < 6mΩ @ VGS=2.5V RDS(ON) < 10mΩ @ VGS=1.8V ESD Rating: 4000V HBM.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package k.

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