• Part: CGH35015
  • Description: GaN HEMT
  • Manufacturer: Cree
  • Size: 788.15 KB
Download CGH35015 Datasheet PDF
Cree
CGH35015
CGH35015 is GaN HEMT manufactured by Cree.
15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride (GaN) high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35015 ideal for 3.3-3.9GHz WiMAX and BWA amplifier applications. The transistor is available in both screw-down, flange and solder-down, pill packages. PPacNk:aCgGeHT3y5p0e1: 454F0a1n6d6CaGnHd3454001159P6 Typical Performance Over 3.3-3.8GHz (TC = 25˚C) of Demonstration Amplifier Parameter 3.3 GHz 3.4 GHz 3.5 GHz 3.6 GHz 3.7 GHz Small Signal Gain 3.8 GHz...