CGH35060F1 hemt equivalent, gan hemt.
* 3.3 - 3.6 GHz Operation
* 60 W Peak Power Capability
* 12 dB Small Signal Gain
* 8.0 W PAVE at < 2.0 % EVM
* 25 % Drain Efficiency at 8 W PAVE .
The transistor is supplied in a ceramic/ metal flange and pill package. Cree GaN-on-SiC HEMTs are highly correctable, e.
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