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CGH35060P1 - GaN HEMT

This page provides the datasheet information for the CGH35060P1, a member of the CGH35060F1 GaN HEMT family.

Datasheet Summary

Description

Wolfspeed’s CGH35060F F1/P1 is a gallium nitride (GaN) high electron mobility transistor(HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal for 3.3-3.6 GHz WiMAX and BWA linear amplifier applications.

Features

  • 3.3 - 3.6 GHz Operation.
  • 60 W Peak Power Capability.
  • 12 dB Small Signal Gain.
  • 8.0 W PAVE at < 2.0% EVM.
  • 25% Drain Efficiency at 8 W PAVE.
  • WiMAX Fixed Access 802.16-2004 OFDM.
  • WiMAX Mobile Access 802.16e OFDMA Large Signal Models Available for ADS and MWO Rev. 3.3, 2022-10-28 4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300 © 2022 Wolfspeed, Inc. All rights reserved. Wolfspeed  and the Wolfstreak logo are registered.

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Datasheet preview – CGH35060P1

Datasheet Details

Part number CGH35060P1
Manufacturer Wolfspeed
File Size 1.43 MB
Description GaN HEMT
Datasheet download datasheet CGH35060P1 Datasheet
Additional preview pages of the CGH35060P1 datasheet.

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CGH35060F1/P1 60 W, 3.3-3.6 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access Description Wolfspeed’s CGH35060F F1/P1 is a gallium nitride (GaN) high electron mobility transistor(HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal for 3.3-3.6 GHz WiMAX and BWA linear amplifier applications. The transistor is supplied in a ceramic/metal flange and pill package. Wolfspeed GaN-on-Silicon Carbide instead HEMTs are highly correctable, enabling even greater efficiency when used with digital pre-distortion (DPD). Package Types: 440193 and 440196 PNs: CGH35060F1 and CGH35060P1 Typical Performance Over 3.3-3.
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