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CGH35060P1

Manufacturer: Wolfspeed

This datasheet includes multiple variants, all published together in a single manufacturer document.

CGH35060P1 datasheet preview

Datasheet Details

Part number CGH35060P1
Datasheet CGH35060P1 CGH35060F1 Datasheet (PDF)
File Size 1.43 MB
Manufacturer Wolfspeed
Description GaN HEMT
CGH35060P1 page 2 CGH35060P1 page 3

CGH35060P1 Overview

Wolfspeed’s CGH35060F F1/P1 is a gallium nitride (GaN) high electron mobility transistor(HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal for 3.3-3.6 GHz WiMAX and BWA linear amplifier applications. The transistor is supplied in a ceramic/metal flange and pill package. Wolfspeed GaN-on-Silicon Carbide instead HEMTs are highly correctable,...

CGH35060P1 Key Features

  • 3.6 GHz Operation
  • 60 W Peak Power Capability
  • 12 dB Small Signal Gain
  • 8.0 W PAVE at < 2.0% EVM
  • 25% Drain Efficiency at 8 W PAVE
  • WiMAX Fixed Access 802.16-2004 OFDM
  • WiMAX Mobile Access 802.16e OFDMA

CGH35060P1 from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
Cree Logo CGH35060P1 GaN HEMT Cree
Wolfspeed logo - Manufacturer

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