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DMN2019UTS - N-Channel MOSFET

General Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Power management functions Load Switch Mechanical Data

Key Features

  • Low On-Resistance.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • ESD Protected up to 2KV.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 standards for High Reliability.

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Full PDF Text Transcription for DMN2019UTS (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for DMN2019UTS. For precise diagrams, and layout, please refer to the original PDF.

NEW PRODUCT DMN2019UTS 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(ON) max 18.5mΩ @ VGS = 10V 21mΩ @ VGS = 4.5V 24mΩ @ VGS = 2.5V 31mΩ @ VGS = ...

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x 18.5mΩ @ VGS = 10V 21mΩ @ VGS = 4.5V 24mΩ @ VGS = 2.5V 31mΩ @ VGS = 1.8V ID max TA = 25°C 5.4 A 5.0 A 4.6 A 3.5 A Features • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • ESD Protected up to 2KV • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 standards for High Reliability Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

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