DMN2011UFDF Overview
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. DMN2011UFDF 20V N-CHANNEL ENHANCEMENT MODE MOSFET.
DMN2011UFDF Key Features
- 0.6mm Profile
- Ideal for Low Profile
DMN2011UFDF Applications
- Ideal for Low Profile Applications PCB Footprint of 4mm2 Low Gate Threshold Voltage Low On-Resistance ESD Protected Gate Totally Lead-Free & Fully RoH