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F59D4G81XB Datasheet

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)
F59D4G81XB datasheet preview

Datasheet Details

Part number F59D4G81XB
Datasheet F59D4G81XB-ESMT.pdf
File Size 2.44 MB
Manufacturer ESMT (Elite Semiconductor Microelectronics Technology)
Description 1.8V NAND Flash Memory
F59D4G81XB page 2 F59D4G81XB page 3

F59D4G81XB Overview

NAND Flash devices include an asynchronous data interface for high-performance I/O operations. These devices use a highly multiplexed 8-bit bus (I/Ox) to transfer mands, address, and data. There are five control signals used to implement the asynchronous data interface:.

F59D4G81XB Key Features

  • Voltage Supply: 1.8V (1.7 V ~ 1.95V)
  • Open NAND Flash Interface (ONFI) 1.0-pliant
  • Single-level cell (SLC) technology
  • Organization
  • Page size: 4352 bytes (4096 + 256 bytes)
  • Block size: 64 pages
  • Number of planes: 1
  • Device size: 4Gb
  • Asynchronous I/O performance
  • tRC/ tWC: 30ns

F59D4G81A from other manufacturers

See all manufacturers

Brand Logo Part Number Description Other Manufacturers
Elite Semiconductor Logo F59D4G81A 4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory Elite Semiconductor
ESMT (Elite Semiconductor Microelectronics Technology) logo - Manufacturer

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