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F59D4G81XB - 1.8V NAND Flash Memory

General Description

NAND Flash devices include an asynchronous data interface for high-performance I/O operations.

These devices use a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data.

Key Features

  • Voltage Supply: 1.8V (1.7 V ~ 1.95V).
  • Open NAND Flash Interface (ONFI) 1.0-compliant.
  • Single-level cell (SLC) technology.
  • Organization.
  • Page size: 4352 bytes (4096 + 256 bytes).
  • Block size: 64 pages.
  • Number of planes: 1.
  • Device size: 4Gb.
  • Asynchronous I/O performance.
  • tRC/ tWC: 30ns.
  • Array performance.
  • Read page: 115μs (MAX) with on-die ECC enabled.
  • Read page: 30μs (MAX) with on-die ECC disabled.

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📁 Similar Datasheet

Part Number Description Manufacturer
F59D4G81A 4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory Elite Semiconductor
F59D4G161A 4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory Elite Semiconductor
F59D1G161A 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory Elite Semiconductor
F59D1G81A 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory Elite Semiconductor
F59D2G161A 2 Gbit (256M x 8 / 128M x 16) 1.8V NAND Flash Memory Elite Semiconductor

Other Datasheets by ESMT (Elite Semiconductor Microelectronics Technology)

Part Number Description
F59D4G81CA-45BG2L 4 Gbit (512M x 8) 1.8V NAND Flash Memory
F59D4G81KA 4-Gbit 1.8V NAND Flash Memory
F59D1G161LB-45BG2M 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G161LB-45TG2M 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G161MA-45BG2L 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Open NAND Flash Interface (ONFI) 1.0-compliant  Single-level cell (SLC) technology  Organization – Page size: 4352 bytes (4096 + 256 bytes) – Block size: 64 pages – Number of planes: 1 – Device size: 4Gb  Asynchronous I/O performance – tRC/ tWC: 30ns  Array performance – Read page: 115μs (MAX) with on-die ECC enabled – Read page: 30μs (MAX) with on-die ECC disabled – Program page: 200μs (TYP) with on-die ECC disabled – Program page: 240μs (TYP) with on-die ECC enabled – Erase block: 2ms (TYP)  Command set: ONFI NAND Flash Protocol  Advanced command set – Program page cache mode – Read page cache mode – Permanent block locking (blocks 47:0) – One-time programmable (OTP) mode – Block lock F59D4G81XB (2X) 4 Gbit (512M x 8) 1.