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F59D4G81XB

F59D4G81XB is 1.8V NAND Flash Memory manufactured by ESMT (Elite Semiconductor Microelectronics Technology).
F59D4G81XB datasheet preview

F59D4G81XB Datasheet

Part number F59D4G81XB
Download F59D4G81XB Datasheet (PDF)
File Size 2.44 MB
Manufacturer ESMT (Elite Semiconductor Microelectronics Technology)
Description 1.8V NAND Flash Memory
F59D4G81XB page 2 F59D4G81XB page 3

F59D4G81XB Overview

NAND Flash devices include an asynchronous data interface for high-performance I/O operations. These devices use a highly multiplexed 8-bit bus (I/Ox) to transfer mands, address, and data. There are five control signals used to implement the asynchronous data interface:.

F59D4G81XB Key Features

  • Voltage Supply: 1.8V (1.7 V ~ 1.95V)
  • Open NAND Flash Interface (ONFI) 1.0-pliant
  • Single-level cell (SLC) technology
  • Organization
  • Page size: 4352 bytes (4096 + 256 bytes)
  • Block size: 64 pages
  • Number of planes: 1
  • Device size: 4Gb
  • Asynchronous I/O performance
  • tRC/ tWC: 30ns

Similar Part Number

Manufacturer Part Number Description
Elite Semiconductor Logo ESMT (Elite Semiconductor Microelectronics Technology) F59D4G81A 4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory

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