AOP604 Datasheet, ETC

n-channel p-channel VDS (V) = 30V -30V ID = 7.5A -6.6A RDS(ON) < 28m Ω < 35m Ω (VGS = 10V) < 43m Ω < 58m Ω (VGS = 4.5V) Schottky VDS=30V, I F=3A, VF<0.5V@1A PDIP-8 S1/A .

A Schottky diode in parallel with the n-channel FET reduces body diode related losses. Features n-channel p-channel VD.

The AOP604 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. A Schottky diode in parallel with the n-channel FET re.