PTB20147 transistor equivalent, 2.5 watts/ 1.8-2.0 ghz cellular radio rf power transistor.
Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 1.
The 20147 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivatio.
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