60 and 54A, 80V. RDS(ON) = 0.022 and 0.025Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the nee.

such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low i.

These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide super.

NDP708B

NDP708A

NDP708AE

NDP7050

NDP7050L

NDP7051

NDP7051L

NDP7052

NDP7052L

NDP7060

NDP7060L

NDP7061

NDP7061L