NDS8410 mosfet equivalent, single n-channel mosfet.
10A, 30V. RDS(ON) = 0.015Ω @ VGS = 10V RDS(ON) = 0.020Ω @ VGS = 4.5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a .
such as notebook computer power management and other battery powered circuits where fast switching, low in-line power lo.
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior.
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