NDS8435A mosfet equivalent, single p-channel mosfet.
-7.9 A, -30 V. RDS(ON) = 0.023 Ω @ VGS = -10 V RDS(ON) = 0.035 Ω @ VGS = -4.5V. High density cell design for extremely low RDS(ON). High power and current handling capabi.
such as notebook computer power management and other battery powered circuits where fast switching, low in-line power lo.
SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior .
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