N-Channel 5.5A, 20V, RDS(ON)=0.035Ω @ VGS=4.5V RDS(ON)=0.045Ω @ VGS=2.7V P-Channel -3.8A, -20V, RDS(ON)=0.07Ω @ VGS=-4.5V RDS(ON)=0.1Ω @ VGS=-2.7V. High density cell desi.

such as notebook computer power management and other battery powered circuits where fast switching, low in-line power lo.

These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and pro.

&P-Channel

NDS8926

NDS8934

NDS8936

NDS8947

NDS8958

NDS8961

NDS8410

NDS8410A

NDS8410S

NDS8425

NDS8426

NDS8426A

NDS8433

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