5.3A, 30V. RDS(ON) = 0.035Ω @ VGS = 10V RDS(ON) = 0.05Ω @ VGS = 4.5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a .

such as notebook computer power management and other battery powered circuits where fast switching, low in-line power lo.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior.

NDS8934

NDS8926

NDS8928

NDS8947

NDS8958

NDS8961

NDS8410

NDS8410A

NDS8410S

NDS8425

NDS8426

NDS8426A

NDS8433