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NDS8928 Dual N&P-Channel MOSFET

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Description

July 1996 NDS8928 Dual N & P-Channel Enhancement Mode Field Effect Transistor General .
These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS techn.

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Features

* N-Channel 5.5A, 20V, RDS(ON)=0.035Ω @ VGS=4.5V RDS(ON)=0.045Ω @ VGS=2.7V P-Channel -3.8A, -20V, RDS(ON)=0.07Ω @ VGS=-4.5V RDS(ON)=0.1Ω @ VGS=-2.7V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual (N & P-Chann

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