NDS8928 Datasheet - Fairchild

NDS8928, Dual N&P-Channel MOSFET

These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS techn.

Features

* N-Channel 5.5A, 20V, RDS(ON)=0.035Ω @ VGS=4.5V RDS(ON)=0.045Ω @ VGS=2.7V P-Channel -3.8A, -20V, RDS(ON)=0.07Ω @ VGS=-4.5V RDS(ON)=0.1Ω @ VGS=-2.7V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual (N & P-Chann

NDS8928_FairchildSemiconductor.pdf