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NDS8936 Dual N-Channel MOSFET

NDS8936 Description

June 1997 NDS8936 Dual N-Channel Enhancement Mode Field Effect Transistor General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

NDS8936 Features

* 5.3A, 30V. RDS(ON) = 0.035Ω @ VGS = 10V RDS(ON) = 0.05Ω @ VGS = 4.5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. ________________________________________________________

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Dual N-Channel MOSFET Fairchild
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