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NDS8961 Dual N-Channel MOSFET

NDS8961 Description

June 1997 NDS8961 Dual N-Channel Enhancement Mode Field Effect Transistor General .
SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

NDS8961 Features

* 3.1 A, 30 V. RDS(ON) = 0.1 Ω @ VGS = 10 V RDS(ON) = 0.15 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. ____________________________________________________

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Dual N-Channel MOSFET Fairchild
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