NDS8961 Datasheet - Fairchild

NDS8961, Dual N-Channel MOSFET

SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

Features

* 3.1 A, 30 V. RDS(ON) = 0.1 Ω @ VGS = 10 V RDS(ON) = 0.15 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. ____________________________________________________

NDS8961_FairchildSemiconductor.pdf