NDS8961 Dual N-Channel MOSFET

Fairchild

Description

June 1997 NDS8961 Dual N-Channel Enhancement Mode Field Effect Transistor General .
SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

📥 Download Datasheet

NDS8961 Datasheet Preview — Preview of NDS8961 PDF

Datasheet Specifications

Part number: NDS8961
Manufacturer: Fairchild
File Size: 331.09 KB
Datasheet: NDS8961_FairchildSemiconductor.pdf
Description: Dual N-Channel MOSFET

Features

* 3.1 A, 30 V. RDS(ON) = 0.1 Ω @ VGS = 10 V RDS(ON) = 0.15 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. ____________________________________________________

NDS8961 Distributors

📁 Related Datasheet

NDS8434 NDS02ZG-M6 NDS03ZA NDS03ZA-M6 NDS03ZB-M6 NDS03ZD-M6

📌 All Tags

NDS8961 Dual N-Channel MOSFET Fairchild

Fairchild NDS8961-like datasheet