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NDS8926

Dual N-Channel MOSFET

NDS8926 Features

* 5.5 A, 20 V. RDS(ON) = 0.035 Ω @ VGS = 4.5 V RDS(ON) = 0.045 Ω @ VGS = 2.7 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. ________________________________________________

NDS8926 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particul.

NDS8926 Datasheet (331.08 KB)

Preview of NDS8926 PDF

Datasheet Details

Part number:

NDS8926

Manufacturer:

Fairchild

File Size:

331.08 KB

Description:

Dual n-channel mosfet.

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NDS8926 Dual N-Channel MOSFET Fairchild

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