NDS8926 Datasheet - Fairchild

NDS8926, Dual N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

Features

* 5.5 A, 20 V. RDS(ON) = 0.035 Ω @ VGS = 4.5 V RDS(ON) = 0.045 Ω @ VGS = 2.7 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. ________________________________________________

NDS8926_FairchildSemiconductor.pdf