NDS8926 Dual N-Channel MOSFET

Fairchild

Description

July 1996 NDS8926 Dual N-Channel Enhancement Mode Field Effect Transistor General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

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Datasheet Specifications

Part number: NDS8926
Manufacturer: Fairchild
File Size: 331.08 KB
Datasheet: NDS8926_FairchildSemiconductor.pdf
Description: Dual N-Channel MOSFET

Features

* 5.5 A, 20 V. RDS(ON) = 0.035 Ω @ VGS = 4.5 V RDS(ON) = 0.045 Ω @ VGS = 2.7 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. ________________________________________________

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NDS8926 Dual N-Channel MOSFET Fairchild

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