NDS8958 Datasheet - Fairchild

NDS8958, Dual N&P-Channel MOSFET

These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS techno.

Features

* N-Channel 5.3A, 30V, RDS(ON)=0.035Ω @ VGS=10V. P-Channel -4.0A, -30V, RDS(ON)=0.065Ω @ VGS=-10V. High density cell design or extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual (N & P-Channel) MOSFET in surface mount package. _____________

NDS8958_FairchildSemiconductor.pdf