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NDS8958 Dual N&P-Channel MOSFET

NDS8958 Description

July 1996 NDS8958 Dual N & P-Channel Enhancement Mode Field Effect Transistor General .
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS techno.

NDS8958 Features

* N-Channel 5.3A, 30V, RDS(ON)=0.035Ω @ VGS=10V. P-Channel -4.0A, -30V, RDS(ON)=0.065Ω @ VGS=-10V. High density cell design or extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual (N & P-Channel) MOSFET in surface mount package. _____________

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Dual N &P-Channel MOSFET Fairchild
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