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NDS8947 Dual P-Channel MOSFET

NDS8947 Description

March 1996 NDS8947 Dual P-Channel Enhancement Mode Field Effect Transistor General .
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

NDS8947 Features

* -4A, -30V. RDS(ON) = 0.065Ω @ VGS = -10V RDS(ON) = 0.1Ω @ VGS = -4.5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. _______________________________________________________

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Dual P-Channel MOSFET Fairchild
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