NDS8947 Datasheet - Fairchild

NDS8947, Dual P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

Features

* -4A, -30V. RDS(ON) = 0.065Ω @ VGS = -10V RDS(ON) = 0.1Ω @ VGS = -4.5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. _______________________________________________________

NDS8947_FairchildSemiconductor.pdf