NDS8947 - Dual P-Channel MOSFET

Product Overview

Fairchild

Part number	NDS8947
Manufacturer	Fairchild
File Size	331.50 KB
Description	Dual P-Channel MOSFET
Datasheet	NDS8947 Datasheet
Additional preview pages of the NDS8947 datasheet.

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

-4A, -30V. RDS(ON) = 0.065Ω @ VGS = -10V RDS(ON) = 0.1Ω @ VGS = -4.5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. ________________________________________________________________________________ 5 4 3 2 1 6 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current T A = 25°C unless otherwise noted NDS89.

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Published: May 12, 2005 |