N-Channel 5.3A, 30V, RDS(ON)=0.035Ω @ VGS=10V. P-Channel -4.0A, -30V, RDS(ON)=0.065Ω @ VGS=-10V. High density cell design or extremely low RDS(ON). High power and curren.

such as notebook computer power management and other battery powered circuits where fast switching, low in-line power lo.

These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and prov.

&P-Channel

NDS8926

NDS8928

NDS8934

NDS8936

NDS8947

NDS8961

NDS8410

NDS8410A

NDS8410S

NDS8425

NDS8426

NDS8426A

NDS8433