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NDS8958 Datasheet - Fairchild

Dual N&P-Channel MOSFET

NDS8958 Features

* N-Channel 5.3A, 30V, RDS(ON)=0.035Ω @ VGS=10V. P-Channel -4.0A, -30V, RDS(ON)=0.065Ω @ VGS=-10V. High density cell design or extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual (N & P-Channel) MOSFET in surface mount package. _____________

NDS8958 General Description

These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices .

NDS8958 Datasheet (354.64 KB)

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Datasheet Details

Part number:

NDS8958

Manufacturer:

Fairchild

File Size:

354.64 KB

Description:

Dual n&p-channel mosfet.

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NDS8958 Dual N &P-Channel MOSFET Fairchild

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