NDS8961 Datasheet - Fairchild

Dual N-Channel MOSFET

NDS8961 Features

* 3.1 A, 30 V. RDS(ON) = 0.1 Ω @ VGS = 10 V RDS(ON) = 0.15 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. ____________________________________________________

NDS8961 General Description

SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.These devices are particular.

NDS8961 Datasheet (331.09 KB)

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Part number:

NDS8961

Manufacturer:

Fairchild

File Size:

331.09 KB

Description:

Dual n-channel mosfet.

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NDS8961 Dual N-Channel MOSFET Fairchild

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NDS8961 Features

NDS8961 General Description

Datasheet Details

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Description:

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