3.1 A, 30 V. RDS(ON) = 0.1 Ω @ VGS = 10 V RDS(ON) = 0.15 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability i.

such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients.

SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior .

NDS8926

NDS8928

NDS8934

NDS8936

NDS8947

NDS8958

NDS8410

NDS8410A

NDS8410S

NDS8425

NDS8426

NDS8426A

NDS8433