NDS9952A mosfet equivalent, dual n&p-channel mosfet.
N-Channel 3.7A, 30V, RDS(ON)=0.08Ω @ VGS=10V. P-Channel -2.9A, -30V, RDS(ON)=0.13Ω @ VGS=-10V. High density cell design or extremely low RDS(ON). High power and current h.
such as notebook computer power management and other battery powered circuits where fast switching, low in-line power lo.
These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide.
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&P-Channel
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