NDS9952A Overview
Description
These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.
Key Features
- High density cell design or extremely low RDS(ON)
- High power and current handling capability in a widely used surface mount package
- Dual (N & P-Channel) MOSFET in surface mount package
