NDS9959 Datasheet (Fairchild) - Dual N-Channel MOSFET

NDS9959, Dual N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pul

NDS9959 Features

* 2.0A, 50V. RDS(ON) = 0.3Ω @ VGS = 10V High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. _________________________________________________________________________________ 5 4 3