Part number:
NDS9955
Manufacturer:
Fairchild
File Size:
196.46 KB
Description:
Dual n-channel mosfet.
* 3.0 A, 50 V. RDS(ON) = 0.130 Ω @ VGS = 10 V, RDS(ON) = 0.200 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-22
NDS9955
Fairchild
196.46 KB
Dual n-channel mosfet.
📁 Related Datasheet
NDS9952A - Dual N&P-Channel MOSFET
(Fairchild)
February 1996
NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description
These dual N- and P-channel enhancement mode p.
NDS9953A - Dual P-Channel MOSFET
(Fairchild)
February 1996
NDS9953A Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
These P-Channel enhancement mode power field effe.
NDS9956A - Dual N-Channel MOSFET
(Fairchild)
February 1996
NDS9956A Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effe.
NDS9957 - Dual N-Channel MOSFET
(Fairchild)
February 1996
NDS9957 Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect.
NDS9958 - Dual N&P-Channel MOSFET
(Fairchild)
February 1996
NDS9958 Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description
These dual N- and P-Channel enhancement mode po.
NDS9959 - Dual N-Channel MOSFET
(Fairchild)
February 1996
NDS9959 Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effec.
NDS9959-NL - Dual N-Channel MOSFET
(VBsemi)
NDS9959-NL-VB
.VBsemi.
NDS9959-NL-VB Datasheet
Dual N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = 10 V
RDS(.
NDS9925A - Dual N-Channel MOSFET
(Fairchild)
May 1998
NDS9925A Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
SO-8 N-Channel enhancement mode power field effect tran.