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NDS9956A Dual N-Channel MOSFET

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Description

February 1996 NDS9956A Dual N-Channel Enhancement Mode Field Effect Transistor General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

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Features

* 3.7A, 30V. RDS(ON) = 0.08Ω @ VGS = 10V High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. ________________________________________________________________________________ 5 4

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