NDS9953A Datasheet (Fairchild) - Dual P-Channel MOSFET

NDS9953A, Dual P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pul

NDS9953A Features

* -2.9A, -30V. RDS(ON) = 0.13Ω @ VGS = -10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. ________________________________________________________________________________