NDS9952A Datasheet (Fairchild) - Dual N&P-Channel MOSFET

NDS9952A, Dual N&P-Channel MOSFET

These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

NDS9952A Features

* N-Channel 3.7A, 30V, RDS(ON)=0.08Ω @ VGS=10V. P-Channel -2.9A, -30V, RDS(ON)=0.13Ω @ VGS=-10V. High density cell design or extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual (N & P-Channel) MOSFET in surface mount package. ________________