NDS9958 Datasheet (Fairchild) - Dual N&P-Channel MOSFET

NDS9958, Dual N&P-Channel MOSFET

These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

NDS9958 Features

* N-Channel 3.5A, 20V, RDS(ON) = 0.1Ω @ VGS = 10V. P-Channel -3.5A , -20V, RDS(ON) = 0.1Ω @ VGS = -10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual (N & P-Channel) MOSFET in surface mount package. ________