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NDS9958 Dual N&P-Channel MOSFET

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Description

February 1996 NDS9958 Dual N & P-Channel Enhancement Mode Field Effect Transistor General .
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS techno.

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Features

* N-Channel 3.5A, 20V, RDS(ON) = 0.1Ω @ VGS = 10V. P-Channel -3.5A , -20V, RDS(ON) = 0.1Ω @ VGS = -10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual (N & P-Channel) MOSFET in surface mount package. ________

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Dual N &P-Channel MOSFET Fairchild
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