NDS9925A Datasheet (Fairchild) - Dual N-Channel MOSFET

NDS9925A, Dual N-Channel MOSFET

SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

These devices are particula

NDS9925A Features

* 4.5 A, 20 V. RDS(ON) = 0.060 Ω @ VGS = 4.5 V RDS(ON) = 0.075 Ω @ VGS = 2.7 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. SOT-23 SuperSOTTM -6 SuperSOTTM -8 SO-8 SOT-