NDS9925A - Dual N-Channel MOSFET

Fairchild

Datasheet Details

SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

4.5 A, 20 V. RDS(ON) = 0.060 Ω @ VGS = 4.5 V RDS(ON) = 0.075 Ω @ VGS = 2.7 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. SOT-23 SuperSOTTM -6 SuperSOTTM -8 SO-8 SOT-223 SOIC-16 D2 D1 D1 D2 S ND 5A 2 99 S2 G2 5 6 7 8 4 3 2 1 SO-8 pin 1 S1 G1 Absolute Maximum Ratings Symbol Parameter TA = 25°C unless otherwise noted NDS9925A Units VDSS VGSS ID Drain-.

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