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NDS9948 Dual P-Channel MOSFET

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Description

February 1996 NDS9948 Dual P-Channel Enhancement Mode Field Effect Transistor General .
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

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Features

* -2.3A, -60V. RDS(ON) = 0.25Ω @ VGS = -10V. High density cell design for low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. ______________________________________________________________________________ 5 4 3 2 1 6

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