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NDS9933A Dual P-Channel MOSFET

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Description

NDS9933A January 1999 NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor General .
This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology.

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Features

* -2.8 A, -20 V. RDS(on) = 0.14 Ω @ VGS = -4.5 V RDS(on) = 0.19 Ω @ VGS = -2.7 V RDS(on) = 0.20 Ω @ VGS = -2.5 V.
* High density cell design for extremely low RDS(on).
* High power and current handling capability in a widely used surface mount package.
* Dual MOSFET

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