NDS9933A Datasheet - Fairchild

NDS9933A Dual P-Channel MOSFET

This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularl.

NDS9933A Features

* -2.8 A, -20 V. RDS(on) = 0.14 Ω @ VGS = -4.5 V RDS(on) = 0.19 Ω @ VGS = -2.7 V RDS(on) = 0.20 Ω @ VGS = -2.5 V.

* High density cell design for extremely low RDS(on).

* High power and current handling capability in a widely used surface mount package.

* Dual MOSFET

NDS9933A_FairchildSemiconductor.pdf