NDS9947 Datasheet - Fairchild

NDS9947 Dual P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pul.

NDS9947 Features

* -3.5A, -20V. RDS(ON) = 0.1Ω @ VGS = 10V High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. ________________________________________________________________________________ 5

NDS9947_FairchildSemiconductor.pdf