NDS9936 Datasheet - Fairchild

NDS9936 Dual N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particul.

NDS9936 Features

* 5A, 30V. RDS(ON) = 0.05Ω @ VGS = 10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. ________________________________________________________________________________ 5 4 3

NDS9936_FairchildSemiconductor.pdf