2N7002T Datasheet | Fairchild Semiconductor

Features - Low On-Resistance - Low Gate Threshold Voltage - Low Input Capacitance - Fast Switching Speed - Low Input/Output Leakage - Ultra-Small Surface Mount Package - Lead Free/Ro HS pliant Drain G SOT 523F Gate Source Ordering Information Part Number 2N7002T Top Mark AA Package SOT-523F 3L Packing Method Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the remended operating conditions and stressing the parts to these levels is not remended. In addition, extended exposure to stresses above the remended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol VDSS VDGR VGSS TJ TSTG Parameter Drain-Source Voltage Drain-Gate Voltage (RGS ≤ 1.0 MΩ) Gate-Source Voltage Drain Current Junction Temperature Storage Temperature Range Continuous Pulsed Continuous Continuous at 100°C Pulsed Value 60 60 ±20 ±40 115 73 800 150 -55 to +150 Unit V V V m A °C °C © 2079 Fairchild Semiconductor Corporation 2N7002T Rev. 1.1 .fairchildsemi. - N-Channel Enhancement Mode Field Effect Transistor Thermal Characteristics Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Parameter Total Device...