FCP260N60E Key Features
- 650 V @ TJ = 150°C
- Typ. RDS(on) = 220 mΩ
- Ultra Low Gate Charge (Typ. Qg = 48 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 129 pF)
- 100% Avalanche Tested
- An Integrated Gate Resistor
- RoHS pliant
| Part Number | Description |
|---|---|
| FCP20N60 | N-Channel MOSFET |
| FCP22N60N | N-Channel MOSFET |
| FCP25N60N | N-Channel MOSFET |
| FCP290N80 | N-Channel MOSFET |
| FCP099N60E | N-Channel MOSFET |