FDC6312P datasheet, mosfet equivalent, Fairchild Semiconductor

datasheet Download (Size : 88.82KB)

FDC6312P Features and benefits

*
  –2.3 A,
  –20 V. RDS(ON) = 115 mΩ @ VGS =
  –4.5 V RDS(ON) = 155 mΩ @ VGS =
  –2.5 V RDS(ON) = 225 mΩ @ VG.

FDC6312P Application

* Power management
* Load switch D2 S1 D1 4 5 G2 3 2 1 SuperSOT TM -6 S2 G1 TA=25oC unless otherwise note.

FDC6312P Description

These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. F.

Image gallery